KSMB840 kersmi electronic co.,ltd. www.kersemi.com 1 description this n-channel mosfets use advanced trench technology and design to provide excellent rds(on) with low gate charge. it can be used in a wide variety of applications. features 1) low gate charge. 2) green device available. 3) advanced high cell denity trench technology for ultra rds(on) 4) excellent package for good heat dissipation. to-2 63 absolute m aximum rating s t c =25 ,unless o therwis e noted symbol parameter ratings units vds drain - source voltage 500 v vgs gate - source voltage 20 v id continuous drain current - 1 9 .0 a continuous drain current - t=100 mj pd power dissipation4 125 w tj, tstg operating and storage junction temperature range - 55 to +150 thermal characteristics bvdss rdson id 500 v 0.9 9 a symbol parameter ratings units r ? jc thermal resistance ,junction to case1 62 /w r ? ja thermal resistance, junction to ambient1 1.0 500v n-channel mosfet
ksm b840 kersmi electronic co.,ltd. www.kersemi.com 2 package marking and ordering information part no. marking package KSMB840 KSMB840 to - 263 electrical characteristics t c =25 unless otherwise noted s ymbol parameter conditions min typ max units off characteristics bv dss drain - sourtce breakdown voltage v ds =0v,i d a??? 500 v i dss zero gate voltage drain current v ds =0v, v ds =32v 25 ? i gss gate - source leakage current v ds =20v, v ds =0a 100 na on characteristics v gs(th) gate - source threshold voltage v ds =vds, i d a??? 2.0 4.0 v r ds(on) drain - source on resistance v ds =10v,i d =6a 0.9 o v ds =2.5v,i d =5a --- g fs forward transconductance v ds =5v,i d =12a 4.9 s dynamic characteristics c iss i nput capacitance v ds =15v,v gs =0v, f=1mhz 1300 pf c oss output capacitance 310 c rss reverse transfer capacitance 120 switching characteristics t d(on ) turn - on delay time v ds =20v, v gs =10v,r gen a?x?o 14 ns t r rise time 23 ns t d(off) t urn - off delay time 49 ns t f f all time 20 ns q g total gate charge v gs =4.5v, v ds =20v , i d =6a 63 nc q gs gate - sourcecharge 9.3 nc q gd gate - ?]v ^ d]oo ?_ z?p 32 nc drain - source diode characteristics v sd source - drain diode forwardvoltage v gs =0v,i s =1a 8.0 v t rr reverse recovery time i f a u]l?a l? ^ 460 970 ns q rr reverse recovery charge 4.2 8.9 nc notes:
ksm b840 kersmi electronic co.,ltd. www.kersemi.com 3 1. the data tested by surface mounted on a 1 inch fr - 4 board 2oz copper. 2. the data tested by pulse ]?zg??u?? ?o g?9 3. the eas data shows max.rating.the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =17.8a 4. the power dissipation is limited by 150 junction temperature. typical characteristics t j =25 unless otherwise noted fig. 1 typ ical output characteristics, f ig. 2 typical transfer characteristics tc = 25 fig. 3 typical output characteristics, f ig. 4 - normalized on - resistance vs. tc = 150 c temperature
ksm b840 kersmi electronic co.,ltd. www.kersemi.com 4 fig. 5 - typical capacitance vs. f ig. 6 - typical source - drain drain - to - source voltage diode forward voltage fig. 7 - typical gate charge vs. fig . 8 - maximum safe gate - to - source voltage operating area fig. 9 - maximum effective transient thermal impedance, junction - to - case
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